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Technical Paper
A 10 MHz - 6 GHz High Power High Linearity 35 dB Digital Step Attenuator MMIC Using GaN HEMTs with TaON Passivation
| Author | Advantest Laboratories, Ltd., G Project Takahiro Tsushima others |
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| Summary | This paper describes a 10 MHz - 6 GHz high power high linearity 35 dB digital step attenuator monolithic microwave integrated circuit (MMIC) for radio frequency automated test equipment (RF ATE) systems. The digital step attenuator MMIC is fabricated using a novel Schottky gallium nitride high electron mobility transistor (GaN HEMT) process that is characterized in very low gate leakage current with tantalum oxy nitride (TaON) passivation technology. Owing to the characteristic of the developed GaN HEMT, circuit topologies for improving large signal performance in wideband from lower frequency can be employed, and the MMIC shows input 1 dB compression point (IP1dB) of more than +40 dBm and input 3rd order intercept point (IIP3) of more than +55 dBm. |
| Key Words | Not Specified |
A Technique for Analyzing On-chip Power Supply Impedance
| Author | Technology Development Group 5th R&D Department FT Technology R&D Section 2 Masahiro Ishida others |
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| Summary | This paper proposes a method for analyzing the power supply impedance at an on-chip power supply node in the device under test. The proposed method is based on an on-chip power measurement of a power supply voltage fluctuation with sweeping the frequency of the on-chip current load which sinks a square wave current, not sinusoidal. The method can extract the frequency characteristics of not only the magnitude but also the phase characteristic of the power supply impedance. Experimental results based on SPICE simulations proved that the proposed method can accurately measure the frequency characteristic of the power supply impedance. It is also confirmed that the extracted power supply impedance characteristics gives quite similar transient voltage waveforms to the target waveforms. |
| Key Words | Power integrity, power supply impedance, power delivery network analysis, Bode's theorem |
Application
Method of device power regulation by PRM™ (Power Regulation Module)
| Author | System Solution Group Memory System Engineering Masataka Onozawa others |
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| Summary | Recent devices quickly change consumption current for energy saving and high speed operating. So, they require high responsivity power supply to correspond quick changing current. Responsivity is improved if the number of power supply units (PPS) per device power is increased. But, it is decreased the number of device parallel testing. We have developed the PRM™ (Power Regulation Module) to improve responsivity without increasing PPS per device power. We got good results using PRM™ even if the number of PPS is small. |
| Key Words | Not Specified |
High speed Linearity Measurement for 14bit ADC by High Speed Linear Ramp generator on EVA100
| Author | ASD T&M Marketing Department Go Utamaru |
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| Summary | In this paper, introduces the high-precision and high-speed ADC linearity test method by the high-speed linear ramp signal generator of 17bit accuracy, mounted on the LF-AWG / DGT module in the EVA100. In the general ADC linearity testing method, which uses a step ramp signal generated by the arbitrary waveform generator (AWG) as a signal source, the test time is limited by the waveform update rate on AWG. On the other hand, the use of high-speed and highly accurate linear ramp signal generated with the analog integrator, it is possible to realize high-speed linearity test that depends on the sampling speed of the ADC as the device under test. |
| Key Words | Not Specified |