Probo No.49 Details Probo No.49 Details

Technical Paper

A New Method for Measuring Alias-Free Aperture Jitter in an ADC Output

Author	Advantest Laboratories Ltd.　Takahiro Yamaguchi others
Summary	This paper proposes a new method for directly measuring alias-free aperture jitter in an ADC output. Both the average ENOB and the worst-case ENOB due to aperture jitter are measured after the elimination of the aliasing noise. Because it adds only a negligible computation time to an existing ENOB test at a single frequency, it can also be used in an HV production environment where it should substantially reduce the overall test time.
Key Words	Not Specified

Fundamentals of quadrature modulation-demodulation and signal analysis

Author	Technology Development Group 10th R&D Department Algorithm R&D Section　Koji Asami
Summary	This paper presents analysis techniques of quadrature modulation-demodulation for digital wireless communications. Using the Fourier transform, the modulation-demodulation is modeled by simple mathematics and its behavior is illustrated. Then the RC polyphase filter and Hilbert transform are introduced, and their relationship with quadrature modulation-demodulation is considered. Finally, as an application example, the paper presents the behavior of a modulator with I/Q imbalances, a significant problem in wideband wireless communications, and describes how to determine stimuli and analyze responses from a circuit under test.
Key Words	Not Specified

A Jitter Separation and BER Estimation Method for Asymmetric Total Jitter Distributions

Author	Technology Development Group 5th R&D Department FT Technology R&D Section 2 Kiyotaka Ichiyama others
Summary	This paper proposes a fast-Fourier-transform-based jitter separation and model-based bit-error-rate (BER) curve estimation technique for analyzing asymmetric total jitter distributions. The proposed method assumes asymmetric deterministic jitter models which have distributions denoted by even and odd functions. It separates deterministic jitter and random jitter by identifying the model parameters from the measured total jitter histogram, and estimates BER-curves based on the models. Experimental results show that the proposed method can analyze jitter and BER-curves more accurately than existing methods. The advantages and limitations of the proposed method are also discussed.
Key Words	Not Specified

Application

Jitter Measurement Using a V93000 Time Measurement Unit (TMU) and Taking into Account the Jitter Transfer Function

Author	Sales Group System Solution Division 2nd SoC System Engineering SoC SE3 Takashi Iino others
Summary	This paper presents a new jitter measurement approach together with actual examples. The approach uses a time measurement unit (TMU) with a built-in V93000 SmartScale generation digital card. In transmitter tests for high-speed serial interfaces, jitter measurement continues to be carried out as an important parameter. In the jitter measurement proposed in this paper, employing a software clock recovery unit (CRU) technique using a TMU and digital signal processing (DSP) technology, it is possible to measure the "true" transmitter jitter, taking into account clock recovery of the receiver, by calculating waveform fluctuations from the difference between the edge position and ideal edge position of the waveform acquired with the TMU, and using a DSP to realize a jitter transfer function based on CRU characteristics prescribed in DUT test standards. As an example of use in an application, the paper examines measurement of output of an actual 12 Gbps transmitter device which contains multiple jitter frequency components, and for which jitter amplitude exceeds 1 Unit Interval (UI). Superiority and practicality in this case is described.
Key Words	TMU, jitter, jitter transfer function, CRU, clock recovery

High accuracy EPE measurement & Lithography Simulation capability for ILT mask

Author	Nanotechnology Business Group Second Product Development Department Software Development Section Satoru Kondo others
Summary	The circuit pattern of the photomask, which is the original plate of the semiconductor device, is increasing complexity. Critical Dimension(CD) measurement and process management of the curvilinear pattern by Inverse Lithography Technology(ILT) are becoming increasingly important. This paper describes that latest model E3640 can measure the complex ILT pattern in high accuracy using mainly two applications named Edge Placement Error(EPE) measurement and Lithography Simulation.
Key Words	Not Specified